Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In2O3-Ga2O3-Zn Thin Films

This study investigated the effects of oxygen (O2) flow rates and annealing temperatures on optical, electrical, structural properties indium–gallium–zinc oxide (IGZO) film glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In2O3 Ga2O3) one direct current (DC) (Zn) magnetron. The average transmittance optical energy gap increased significantly when rate was from 1 sccm to 3 sccm. An O2 during IGZO films caused crystallinity InGaZn7O10 phase increase, yielding smoother more uniform granular structure. carrier mobility rose concentration decreased increasing flow. results X-ray photoelectron spectra (XPS) analyses explained impacts electrical co-sputtered films. optimum process conditions In2O3-Ga2O3-Zn were revealed as an temperature at 300 °C, which showed largest 82.48%, larger bandgap 3.21 eV, 7.01 cm2 V−1s−1. XPS various indicated that have stable chemical compositions among different temperatures.